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A2T20H330W24NR6 1 rf device data nxp semiconductors rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 55 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 mhz. 1880?2025 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 700 ma, v gsb =0.1vdc,p out = 55 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 1880 mhz 15.6 49.6 7.8 ?31.2 1960 mhz 16.3 50.3 7.8 ?32.1 2025 mhz 15.3 47.4 7.6 ?33.1 features ? advanced high performance in--package doherty ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage r ange for improved class c operation ? designed for digital predistorti on error corre ction systems document number: a2t20h330w24n rev. 0, 9/2016 nxp semiconductors technical data 1880?2025 mhz, 55 w avg., 28 v airfast rf power ldmos transistor A2T20H330W24NR6 1. pin connections 4 and 5 are dc coupled and rf independent. 2. device cannot operate with v dd current supplied through pin 3 and pin 6. figure 1. pin connections (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (2) vbw b (2) 6 3 15 24 carrier peaking (1) note: exposed backside of the package is the source terminal for the transistor. om--1230--4l2l plastic ? 2016 nxp b.v.
2 rf device data nxp semiconductors A2T20H330W24NR6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +125 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 76 ? c, 55 w avg., w--cdma, 28 vdc, i dqa = 700 ma, v gsb = 0.1 vdc, f = 1960 mhz r ? jc 0.26 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a, carrier gate threshold voltage (v ds =10vdc,i d = 140 ? adc) v gs(th) 0.8 1.2 2.2 vdc gate quiescent voltage (v dd =28vdc,i d = 700 madc, measured in functional test) v gsa(q) 2.3 2.6 3.1 vdc drain--source on--voltage (v gs =10vdc,i d =1.4adc) v ds(on) 0.1 0.15 0.3 vdc on characteristics -- side b, peaking gate threshold voltage (v ds =10vdc,i d = 180 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =1.8adc) v ds(on) 0.1 0.15 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. 4. side a and side b are tied together for these measurements. (continued)
A2T20H330W24NR6 3 rf device data nxp semiconductors table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in nxp doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 700 ma, v gsb =0.1vdc, p out = 55 w avg., f = 1880 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 14.8 15.9 17.8 db drain efficiency ? d 46.7 49.8 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.4 7.9 ? db adjacent channel power ratio acpr ? ?32.8 ?28.7 dbc load mismatch (3) (in nxp doherty test fixture, 50 ohm system) i dqa = 700 ma, v gsb = 0.1 vdc, f = 1960 mhz, 12 ? sec(on), 10% duty cycle vswr 5:1 at 28 vdc, 191 w pulsed cw output power (0 db input overdrive from 191 w pulsed cw rated power) no device degradation typical performance (3) (in nxp doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 700 ma, v gsb =0.1vdc, 1880?2025 mhz bandwidth p out @ 1 db compression point, cw p1db ? 229 ? w p out @ 3 db compression point (4) p3db ? 383 ? w am/pm (maximum value measured at the p3db compression point across the 1880?2025 mhz bandwidth) ? ? ?13 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 130 ? mhz gain flatness in 145 mhz bandwidth @ p out =55wavg. g f ? 0.8 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.001 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.003 ? db/ ? c table 6. ordering information device tape and reel information package A2T20H330W24NR6 r6 suffix = 150 units, 56 mm tape width, 13--inch reel om--1230--4l2l 1. v dda and v ddb must be tied together and powered by a single dc power supply. 2. part internally matched both on input and output. 3. measurements made with device in an a symmetrical doherty configuration. 4. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data nxp semiconductors A2T20H330W24NR6 figure 2. A2T20H330W24NR6 test circuit component layout a2t20h330w24n d73166 c1 c2 c3 c4 c7 c15 c5 c6 c12 r2 r3 c14 c11 c13 c16 c20 c19 c21 r1 c8 c9 c10 c22 c23 c18 v gga z1 rev. 2 v ggb v ddb c17 v dda cut out area note: v dda and v ddb must be tied together and powered by a single dc power supply. c p table 7. A2T20H330W24NR6 test circui t component designations and values part description part number manufacturer c1, c2, c3, c4, c5, c6, c7 8.2 pf chip capacitors atc600f8r2jt250xt atc c8, c9, c10, c11 0.3 pf chip capacitors atc600f0r3jt250xt atc c12 0.5 pf chip capacitor atc600f0r5bt250xt atc c13 0.6 pf chip capacitor atc600f0r6bt250xt atc c14 1.1 pf chip capacitor atc600f1r1bt250xt atc c15 7.5 pf chip capacitor atc600f7r5bt250xt atc c16, c17, c18, c19, c20, c21 10 ? f chip capacitors c5750x7s2a106m230kb tdk c22, c23 220 ? f, 50 v electrolytic capacitors 227cks050m illinois capacitor r1 50 ? , 10 w chip resistor c10a50z4 anaren r2, r3 2.7 ? , 1/4 w chip resistors crcw12062r70fkea vishay z1 1800?2200 mhz band, 90 ? , 5 db directional coupler x3c19p1--05s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d73166 mtl
A2T20H330W24NR6 5 rf device data nxp semiconductors typical characteris tics ? 1880?2025 mhz parc (db) ?2.3 ?1.5 ?1.7 ?1.9 ?2.1 ?2.5 1850 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 55 watts avg. 13 17 16.6 16.2 ?35 53 51 49 47 ?30 ?31 ?32 ?33 ? d , drain efficiency (%) g ps , power gain (db) 15.8 15.4 15 14.6 14.2 13.8 13.4 1875 1900 1925 1950 1975 2000 2025 2050 45 ?34 acpr (dbc) acpr parc g ps figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?60 ?20 ? 30 ?50 300 imd, intermodulatio n distortion (dbc) ? 40 100 ? 10 v dd =28vdc,p out = 20 w (pep), i dqa = 700 ma, v gsb =0.1vdc two--tone measurements (f1 + f2)/2 = center frequency of 1960 mhz im3--l im7--l im7--u im3--u im5--l im5--u 1 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) 0 ?2 30 1 ?1 ?3 output compression at 0.01% probability on ccdf (db) 10 50 70 110 10 70 60 50 40 30 20 ? d ? drain efficiency (%) 90 ? d acpr parc acpr (dbc) ?45 ?15 ?20 ?25 ?35 ?30 ?40 17.5 g ps , power gain (db) 17 16.5 16 15.5 15 14.5 g ps ?4 ?1 db = 28.3 w ?2 db = 51.5 w ?3 db = 72.8 w ?5 v dd =28vdc,i dqa = 700 ma, v gsb = 0.1 vdc, f = 1960 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth ? d v dd =28vdc,p out =55w(avg.) i dqa = 700 ma, v gsb =0.1vdc single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probab ility on ccdf input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf
6 rf device data nxp semiconductors A2T20H330W24NR6 typical characteris tics ? 1880?2025 mhz 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power 0 ?10 8 20 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 18 16 10 10 ?50 acpr (dbc) 14 12 10 10 ?20 ?30 ?40 figure 7. broadband frequency response 14 17 f, frequency (mhz) 16 15.5 15 gain (db) 16.5 14.5 1750 1800 1850 1900 1950 2000 2050 2100 2150 gain acpr g ps 1880 mhz ? d 1960 mhz 2025 mhz v dd =28vdc p in =0dbm i dqa = 700 ma v gsb =0.1vdc 100 300 1960 mhz 2025 mhz 1880 mhz 2025 mhz 1960 mhz 1880 mhz v dd =28vdc,i dqa = 700 ma, v gsb =0.1vdc single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf
A2T20H330W24NR6 7 rf device data nxp semiconductors table 8. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 697 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 0.90 ? j3.49 1.03 + j3.46 1.10 ? j2.83 19.6 51.9 155 56.9 ?15 1960 2.03 ? j4.74 1.94 + j4.58 1.13 ? j2.91 19.5 51.9 156 56.8 ?15 2025 4.03 ? j6.34 4.09 + j5.83 1.14 ? j2.94 19.5 51.8 152 55.2 ?15 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 0.90 ? j3.49 0.95 + j3.53 1.06 ? j2.94 17.3 52.7 186 58.1 ?19 1960 2.03 ? j4.74 1.85 + j4.74 1.13 ? j3.04 17.2 52.7 185 58.1 ?18 2025 4.03 ? j6.34 4.10 + j6.23 1.15 ? j3.06 17.2 52.6 181 56.7 ?19 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 9. carrier side load pull performance ? maximum efficiency tuning v dd =28vdc,i dqa = 697 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 0.90 ? j3.49 1.15 + j3.85 3.07 ? j1.83 23.0 49.0 79 68.3 ?17 1960 2.03 ? j4.74 2.50 + j4.99 2.76 ? j1.68 22.6 49.0 80 67.7 ?17 2025 4.03 ? j6.34 5.09 + j6.21 1.91 ? j1.94 22.2 50.1 102 65.0 ?18 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 0.90 ? j3.49 1.20 + j3.90 3.07 ? j1.83 21.0 49.9 97 71.4 ?25 1960 2.03 ? j4.74 2.55 + j5.10 2.76 ? j1.68 20.6 49.9 99 69.9 ?24 2025 4.03 ? j6.34 6.23 + j6.35 2.04 ? j1.25 21.2 49.5 89 67.6 ?27 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data nxp semiconductors A2T20H330W24NR6 table 10. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =1.7vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.16 ? j3.95 0.87 + j4.11 1.55 ? j2.98 14.7 53.4 217 55.2 ?32 1960 2.19 ? j5.24 1.69 + j5.51 1.64 ? j2.91 14.7 53.5 223 57.5 ?31 2025 4.51 ? j6.98 3.76 + j7.58 1.58 ? j2.84 14.7 53.4 221 56.2 ?32 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.16 ? j3.95 0.87 + j4.26 1.61 ? j3.06 12.7 54.1 258 57.9 ?38 1960 2.19 ? j5.24 1.80 + j5.80 1.67 ? j3.08 12.6 54.2 263 58.5 ?38 2025 4.51 ? j6.98 4.29 + j8.08 1.66 ? j3.03 12.6 54.1 258 57.1 ?39 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 11. peaking side load pull performance ? maximum efficiency tuning v dd =28vdc,v gsb =1.7vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.16 ? j3.95 0.81 + j4.10 3.98 ? j2.80 15.5 51.9 154 66.6 ?37 1960 2.19 ? j5.24 1.52 + j5.46 3.44 ? j1.48 15.5 51.8 150 67.4 ?37 2025 4.51 ? j6.98 3.36 + j7.55 2.72 ? j1.22 15.5 51.8 150 66.5 ?38 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 1880 1.16 ? j3.95 0.84 + j4.26 3.68 ? j3.07 13.5 52.7 186 66.1 ?44 1960 2.19 ? j5.24 1.69 + j5.79 3.33 ? j2.09 13.4 52.8 191 66.7 ?44 2025 4.51 ? j6.98 4.01 + j8.11 2.83 ? j1.67 13.5 52.7 188 65.9 ?46 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
A2T20H330W24NR6 9 rf device data nxp semiconductors p1db -- typical carrier side load pull contours ? 1960 mhz -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power 49.5 49 48 24 -- 2 2 48.5 51.5 51 -- 1 4 -- 1 6 -- 1 8 -- 2 0 -- 1 0 -- 1 2 23.5 p e 50.5 50 64 58 60 62 52 54 56 66 23 22.5 22 21.5 21 20.5 20 -- 2 4 -- 2 6 -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 8. p1db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) -- 5 1 -- 1 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 9. p1db load pull efficiency contours (%) real ( ? ) -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) p e p e p e
10 rf device data nxp semiconductors A2T20H330W24NR6 p3db -- typical carrier side load pull contours ? 1960 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 12. p3db load pull output power contours (dbm) real ( ? ) 50.5 51 48.5 50 51.5 49.5 52 52.5 49 p e imaginary ( ? ) -- 5 1 -- 1 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 13. p3db load pull efficiency contours (%) real ( ? ) 64 58 60 62 54 56 68 66 p e -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 14. p3db load pull gain contours (db) real ( ? ) 21.5 21 20.5 20 19.5 17.5 18.5 19 18 p e -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) -- 2 8 -- 2 6 -- 2 4 -- 2 2 -- 2 0 -- 3 0 -- 1 8 -- 1 4 -- 1 6 p e
A2T20H330W24NR6 11 rf device data nxp semiconductors p1db -- typical peaking side load pull contours ? 1960 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power -- 4 2 -- 3 8 -- 3 6 -- 3 4 -- 3 2 -- 3 0 -- 2 8 -- 4 0 50.5 51 49.5 50 51.5 52 52.5 53 -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 16. p1db load pull output power contours (dbm) real ( ? ) p e -- 5 1 -- 1 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 17. p1db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) 64 58 60 66 62 52 54 56 p e -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 18. p1db load pull gain contours (db) real ( ? ) 14.5 15 15.5 14 14.5 13.5 12.5 13 12 11.5 p e -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 19. p1db load pull am/pm contours ( ? ) real ( ? ) p e
12 rf device data nxp semiconductors A2T20H330W24NR6 p3db -- typical peaking side load pull contours ? 1960 mhz note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power 50.5 51 50 52 52.5 53 51.5 53.5 54 -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 20. p3db load pull output power contours (dbm) real ( ? ) p e 58 60 62 52 54 56 64 -- 5 1 -- 1 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 21. p3db load pull efficiency contours (%) real ( ? ) imaginary ( ? ) p e 66 12.5 13 13.5 12 12.5 11.5 10.5 11 10 9.5 -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 22. p3db load pull gain contours (db) real ( ? ) p e -- 5 1 -- 1 imaginary ( ? ) 2 34 06 0 -- 2 -- 3 5 -- 4 1 figure 23. p3db load pull am/pm contours ( ? ) real ( ? ) -- 4 8 -- 4 6 -- 4 4 -- 4 2 -- 4 0 -- 5 0 -- 3 8 -- 3 6 -- 3 4 p e
A2T20H330W24NR6 13 rf device data nxp semiconductors package dimensions
14 rf device data nxp semiconductors A2T20H330W24NR6
A2T20H330W24NR6 15 rf device data nxp semiconductors
16 rf device data nxp semiconductors A2T20H330W24NR6 product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 sept. 2016 ? initial release of data sheet
A2T20H330W24NR6 17 rf device data nxp semiconductors how to reach us: home page: nxp.com web support: nxp.com/support information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does nxp assume any li ability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or i ncidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp, the nxp logo, freescale, the freescale logo, and airfast are trademarks of nxp b.v. all other product or service names are the property of their respective owners. e 2016 nxp b.v. document number: a2t20h330w24n rev. 0, 9/2016

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